# Chapter 14: Integrated Devices¶

## Example 14.1 Page 493¶

In [1]:
#initialisation of variable

from math import *
Rs=1;#resistance
l=90;#length
w=10;#width
e=1.3;

#calculation
n=l/w;#number
R=(n+e)*Rs;#resistance

#result
print"resistance is",round(R,2),"Kohm"

resistance is 10.3 Kohm


## Example 14.2 Page 494¶

In [2]:
#initialisation of variable
from math import *
A=4*10**-8;#area
E=8.85*10**-14;#constant
V=5;#voltage
t1=1*10**-6;#nm
t2=5*10**-7;#nm
D1=3.9;#dielectric constant
D2=25;#dielectric constant
q=1.6*10**-19;#charge

#calculation
Qa=D1*E*A*V/t1;#charge
Na=Qa/q;#number
Qb=D2*E*A*V/t2;#charge
Nb=Qb/q;#number

#result
print"stored charge for Sio2 is",round(Qa,16),"C"
print"stored charge for Ta2O5 is",round(Qb,15),"C"
print"no. of electrons for Sio2 is",round(Na,2),"electrons"
print"no. of electrons for ta2O5 is",round(Nb,2),"electrons"

stored charge for Sio2 is 6.9e-14 C
stored charge for Ta2O5 is 8.85e-13 C
no. of electrons for Sio2 is 431437.5 electrons
no. of electrons for ta2O5 is 5531250.0 electrons


## Example 14.3 Page 496¶

In [3]:
#initialisation of variable
from math import *
H=10**-8;#Henry
N=20;#turns
u=1.2*10**-6;#constant

#calculation

#result

required radius is 20.8 micro-m


## Example 14.4 Page 507¶

In [4]:
#initialisation of variable
from math import *
l=5;#length
B=8;#MV/cm

#calculation
V=l*B;#voltage

#result
print"gate-to-source voltage is",round(V/10,2),"V"

gate-to-source voltage is 4.0 V


## Example 14.5 Page 525¶

In [2]:
#initialisation of variable
from math import *
t=1.5;#thickness
eo=3.9;
e1=7;
e2=25;#for Ta2O5
e3=80;#for TiO2

#calculation
Dn=t*e1/eo;#nitride
D1=t*e2/eo;#for Ta2O5
D2=t*e3/eo;#for TiO2

#result
print"oxide thickness for nitride is",round(Dn,2),"nm"
print"oxide thickness for Ta2O5 is",round(D1,2),"nm"
print"oxide thickness for TiO2 is",round(D2,2),"nm"
print"the answer for part 3 is incorrect in the textbook"

oxide thickness for nitride is 2.69 nm
oxide thickness for Ta2O5 is 9.62 nm
oxide thickness for TiO2 is 30.77 nm
the answer for part 3 is incorrect in the textbook